16T10AF-B Triac DATASHEET

16T10AF-B ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1000 V
   Maximum RMS on-state current (I_T(RMS)): 16 A
   Non repetitive surge peak on-state current (I_TSM): 160 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 400 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.1 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 50 mA

Package: TO‑220F

16T10AF-B Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

16T10AF-B Datasheet

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Description

RoHS 16T Series RoHS SEMICONDUCTOR TRIACs, 16A Snubberless, Logic Level and Standard Features A2 ● Medium current Triac ● Low thermal resistance with clip bonding 1 2 ● Low thermal resistance insulation ceramic for 3 A1 A2 insulated 16T G ● High commutation (4Q) or very high TO-220AB (non-Insulated) TO-220AB (lnsulated) commutation (3Q) capability (16TxxA) (16TxxAI) ● RoHS compliant, UL certified (File NO:E320098) ● Insulated tab (16TxxAI series,

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. 16T10AF-B Datasheet