16TTS16S SCR DATASHEET

16TTS16S ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum average on-state current (I_T(AVR)): 13 A
   Maximum RMS on-state current (I_T(RMS)): 20 A
   Non repetitive surge peak on-state current (I_TSM): 200 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.3 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.75 V
   Triggering gate current (I_GT): 32 mA

Package: TO‑263

 

16TTS16S Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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16TTS16S Datasheet

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Description

INCHANGE Semiconductor isc Thyristors 16TTS16S APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor control circuits in power tools and kitchen aids,in-rush current limiting circuits, . capacitive discharge ignition, voltage regulation circuits etc. ·Minimum Lot-to-Lot variations for robust device performance K A G and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT 400 V R