All Transistors. SCR. 1940PT45E0 Datasheet

 

1940PT45E0 SCR DATASHEET

1940PT45E0 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 10 W
   Maximum repetitive peak and off-state voltage (VDRM): 4500 V
   Maximum average on-state current (IT(AVR)): 1940 A
   Maximum RMS on-state current (IT(RMS)): 3080 A
   Non repetitive surge peak on-state current (ITSM): 27500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.02 K/W
   Triggering gate voltage (VGT): 4 V
   Peak on-state voltage drop (VTM): 2.1 V
   Triggering gate current (IGT): 400 mA
   Holding current (IH): 300 mA

 

1940PT45E0 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

1940PT45E0 Datasheet

Page #1

1940PT45E0
 datasheet

Page #2

1940PT45E0
 datasheet #2

Description

RoHS RoHS SEMICONDUCTOR RoHS 1940PT Series RoHS SEMICONDUCTOR 1940PT52E 1940PT52E 1940PT52E 1940PT52E 1940PT52E 1940PT52E www.nellsemi.com Page 2 of 2

 
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