1940PT45E0 SCR DATASHEET
1940PT45E0 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 10 W
Maximum repetitive peak and off-state voltage (VDRM): 4500 V
Maximum average on-state current (IT(AVR)): 1940 A
Maximum RMS on-state current (IT(RMS)): 3080 A
Non repetitive surge peak on-state current (ITSM): 27500 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.02 K/W
Triggering gate voltage (VGT): 4 V
Peak on-state voltage drop (VTM): 2.1 V
Triggering gate current (IGT): 400 mA
Holding current (IH): 300 mA
1940PT45E0 Datasheet
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Description
RoHS RoHS SEMICONDUCTOR RoHS 1940PT Series RoHS SEMICONDUCTOR 1940PT52E 1940PT52E 1940PT52E 1940PT52E 1940PT52E 1940PT52E www.nellsemi.com Page 2 of 2
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |