1T08ED Triac DATASHEET
1T08ED ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 1 A
Non repetitive surge peak on-state current (ITSM): 16 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 150 K/W
Junction to case thermal resistance (RTH(j-c)): 60 K/W
Triggering gate voltage (VGT): 1.3 V
Peak on-state voltage drop (VTM): 1.5 V
Triggering gate current (IGT): 5 mA
Holding current (IH): 10 mA
Package: TO‑92
1T08ED Datasheet
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Description
RoHS 1T Series RoHS SEMICONDUCTOR Standard TRIACs, 1A FEATURES On-state RMS current, lT(RMS)=1A Repetitive peak off-state voltage, VDRM/VRRM = 600 or 800V Triggering gate current, lGT (Q1) 3 to 25 mA APPLICATIONS The 1T series is suitable for general purpose AC switching applications. These devices are typically used in applications such as home A2 appliances (electrovalve, pump, door lock, small TO-92 G lamp control), fan speed controllers,... A1 (1TxxE) 3(A2) Diffe
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |