All Transistors. SCR. 1T08ET Datasheet

 

1T08ET Triac DATASHEET

1T08ET ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 1 W
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 1 A
   Non repetitive surge peak on-state current (ITSM): 16 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 150 K/W
   Junction to case thermal resistance (RTH(j-c)): 60 K/W
   Triggering gate voltage (VGT): 1.3 V
   Peak on-state voltage drop (VTM): 1.5 V
   Triggering gate current (IGT): 3 mA
   Holding current (IH): 7 mA

Package: TO‑92

 

1T08ET Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

1T08ET Datasheet

Page #1

1T08ET
 datasheet

Page #2

1T08ET
 datasheet #2

Description

RoHS 1T Series RoHS SEMICONDUCTOR Standard TRIACs, 1A FEATURES On-state RMS current, lT(RMS)=1A Repetitive peak off-state voltage, VDRM/VRRM = 600 or 800V Triggering gate current, lGT (Q1) 3 to 25 mA APPLICATIONS The 1T series is suitable for general purpose AC switching applications. These devices are typically used in applications such as home A2 appliances (electrovalve, pump, door lock, small TO-92 G lamp control), fan speed controllers,... A1 (1TxxE) 3(A2) Diffe

 
Back to Top