2310PT04D0 SCR DATASHEET
2310PT04D0 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 3 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 2310 A
Maximum RMS on-state current (IT(RMS)): 4150 A
Non repetitive surge peak on-state current (ITSM): 42500 A
Critical repetitive rate of rise of on-state current (dI/dt): 1000 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.04 K/W
Triggering gate voltage (VGT): 1.1 V
Peak on-state voltage drop (VTM): 1.44 V
Triggering gate current (IGT): 100 mA
Holding current (IH): 300 mA
Package: TO‑200AC
2310PT04D0 Datasheet
Page #1
Page #2
Description
RoHS 2310PT Series RoHS SEMICONDUCTOR Nell High Power Products Phase Control Thyristors (Hockey PUK Version), 2310A FEATURES Center amplifying gate Metal case with ceramic insulator TO-200AC (K-PUK), Nell’s D-type Capsule lnternational standard case Compliant to RoHS Designed and qualified for industrial level TO-200AC(K-PUK) TYPICAL APPLICATIONS (Nell’s D-type Capsule) DC motor controls Controlled DC power supplies AC controllers PRODUCT SUMMARY IT(AV) 23
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |