All Transistors. SCR. 25NT-40 Datasheet

 

25NT-40 SCR DATASHEET

25NT-40 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 25 A
   Maximum RMS on-state current (IT(RMS)): 40 A
   Non repetitive surge peak on-state current (ITSM): 380 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.9 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 60 mA
   Holding current (IH): 150 mA

Package: TO‑208AA

 

25NT-40 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

25NT-40 Datasheet

Page #1

25NT-40
 datasheet

Page #2

25NT-40
 datasheet #2

Description

25NT Naina Semiconductor emiconductor Ltd. Phase Control Phase Control Thyristors (Stud Type), 25A Features • Improved glass passivation for high reliability glass passivation for high reliability • Exceptional stability at high temperatures Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance Electrical Ratings (T = 250C, unless otherwise noted) C, unless otherwise noted) J P

 
Back to Top