All Transistors. SCR. 25NTT-120 Datasheet

 

25NTT-120 SCR-module DATASHEET

25NTT-120 ELECTRICAL SPECIFICATIONS

 

   Type: SCR-module
   Maximum repetitive peak and off-state voltage (VDRM): 1200 V
   Maximum average on-state current (IT(AVR)): 25 A
   Maximum RMS on-state current (IT(RMS)): 50 A
   Non repetitive surge peak on-state current (ITSM): 450 A
   Critical rate of rise of off-state voltage (dV/dt): 300 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -65..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.9 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 1.3 V
   Triggering gate current (IGT): 100 mA
   Holding current (IH): 100 mA

Package: M1‑A

 

25NTT-120 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

25NTT-120 Datasheet

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25NTT-120
 datasheet

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25NTT-120
 datasheet #2

Description

25NTT Naina Semiconductor Ltd. Thyristor – Thyristor Module, 25A Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Maximum Ratings (TA = 250C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current @ TJ = IF(AV) 25 A 850C Maximum average RMS forward current IF(RMS) 50 A Maximum non-repetitive surge current IFSM 4

 
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