25TTS12 SCR DATASHEET

25TTS12 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 16 A
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 300 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.5 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.25 V
   Triggering gate current (I_GT): 45 mA

Package: TO‑220

 

25TTS12 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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25TTS12 Datasheet

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Description

isc Thyristors 25TTS12 APPLICATIONS ·Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V Repetitive peak off-state voltage 1200 V DRM V Repetitive peak rever