2N1597 SCR DATASHEET

2N1597 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 1.6 A
   Non repetitive surge peak on-state current (I_TSM): 15 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -20..100 °C
   Triggering gate voltage (V_GT): 0.7 V
   Peak on-state voltage drop (V_TM): 1.1 V
   Triggering gate current (I_GT): 2 mA
   Holding current (I_H): 5 mA

Package: TO‑205AD

 

2N1597 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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2N1597 Datasheet

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Description

2N1595 – 2N1596 – 2N1597 – 2N1598 – 2N1599 SILICON THYRISTORS SILICON THYRISTORS Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications Current handling capability of 1.6 amperes at junction temperetures to 100°C. Compliance to RoHS. MAXIMUM RATINGS (*) TJ=100°C unless otherwise noted Symbol Ratings 2N1595 2N1596 2N1597 2N1598 2N1599 Unit VRSM(REP) Peak reverse blocking voltage (*) 50 100 200 300 4