2N1598 SCR DATASHEET
2N1598 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.1 W
Maximum repetitive peak and off-state voltage (VDRM): 300 V
Maximum RMS on-state current (IT(RMS)): 1.6 A
Non repetitive surge peak on-state current (ITSM): 15 A
Maximum operating junction and storage temperature range (Tstg, Tj): -20..100 °C
Triggering gate voltage (VGT): 0.7 V
Peak on-state voltage drop (VTM): 1.1 V
Triggering gate current (IGT): 2 mA
Holding current (IH): 5 mA
Package: TO‑205AD
2N1598 Datasheet
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Description
2N1595 – 2N1596 – 2N1597 – 2N1598 – 2N1599 SILICON THYRISTORS SILICON THYRISTORS Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications Current handling capability of 1.6 amperes at junction temperetures to 100°C. Compliance to RoHS. MAXIMUM RATINGS (*) TJ=100°C unless otherwise noted Symbol Ratings 2N1595 2N1596 2N1597 2N1598 2N1599 Unit VRSM(REP) Peak reverse blocking voltage (*) 50 100 200 300 4
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |