All Transistors. SCR. 2N2322 Datasheet

 

2N2322 SCR DATASHEET

2N2322 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 0.1 W
   Maximum repetitive peak and off-state voltage (VDRM): 25 V
   Maximum RMS on-state current (IT(RMS)): 1.6 A
   Non repetitive surge peak on-state current (ITSM): 15 A
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.5 V
   Triggering gate current (IGT): 0.2 mA

Package: TO‑205AD

 

2N2322 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

2N2322 Datasheet

Page #1

2N2322
 datasheet

Page #2

2N2322
 datasheet #2

Description

2n2322 to 2n2326 SILICON THYRISTORS SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol Ratings 2N2322 2N2323 2N2324 2N2325 2N2326 Unit Peak reverse blocking voltage VRRM(REP) 25 50 100 150 200 V (*) VRSM(NON- Non-repetitive peak blocking 40 75 150 225 300 V reverse voltage (t<5.0 ms) REP) Forward Current RM

 
Back to Top