2N2324AS SCR DATASHEET
2N2324AS ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.1 W
Maximum repetitive peak and off-state voltage (VDRM): 100 V
Maximum RMS on-state current (IT(RMS)): 1.6 A
Maximum operating junction and storage temperature range (Tstg, Tj): -65..125 °C
Triggering gate voltage (VGT): 0.8 V
Triggering gate current (IGT): 0.02 mA
Package: TO‑205AD
2N2324AS Datasheet
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Description
Silicon Controlled Rectifier 2N2323, 2N2324, 2N2326, 2N2328 & 2N2329 2N2323S, 2N2324S, 2N2326S, 2N2328S & 2N2329S 2N2323A, 2N2324A, 2N2326A & 2N2328A, 2N2329A 2N2323AS, 2N2324AS, 2N2326AS, 2N2328AS, 2N2329AS Features • Available in JAN, JANTX and JANTXV per MIL-PRF-19500/276 • TO-5 & TO-39 (TO-205AD) Package Maximum Ratings 2N2323, S/ 2N2324, S/ 2N2326, S/ 2N2328, S/ 2N2329, S/ Ratings Symbol Unit 2N2323A, S 2N2324A, S 2N2326A, S 2N2328A, S 2N2329A, S VRM 50 Reverse Voltage
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Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |