2N2325 SCR DATASHEET

2N2325 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 150 V
   Maximum average on-state current (I_T(AVR)): 1 A
   Maximum RMS on-state current (I_T(RMS)): 1.6 A
   Non repetitive surge peak on-state current (I_TSM): 15 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -65..125 °C
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 2 mA

Package: TO‑205AD

 

2N2325 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

2N2325 Datasheet

Page #1

Page #2

Description

2n2322 to 2n2326 SILICON THYRISTORS SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol Ratings 2N2322 2N2323 2N2324 2N2325 2N2326 Unit Peak reverse blocking voltage VRRM(REP) 25 50 100 150 200 V (*) VRSM(NON- Non-repetitive peak blocking 40 75 150 225 300 V reverse voltage (t<5.0 ms) REP) Forward Current RM