2N5446 Triac Spec

2N5446 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 40 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 40 A
   Non repetitive surge peak on-state current (I_TSM): 265 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -65..110 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.9 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 2 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 60 mA

Package: STUD

 

2N5446 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

2N5446 Spec

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Description

DI GI TRON S EMI CONDUCTORS 2N5441-2N5446, T6420 SERIES 40 AMP SILICON TRIACS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (Sinusoidal supply voltage at frequency 50/60Hz and with resistive or inductive load) 2N5441 2N5442 2N5443 Rating Symbol 2N5444 2N5445 2N5446 Unit T6420B T6420D T6420M Repetitive peak off-state volt