All Transistors. SCR. 2N6073A Datasheet

 

2N6073A Triac DATASHEET

2N6073A ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 10 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 30 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
   Junction to case thermal resistance (RTH(j-c)): 3.5 K/W
   Triggering gate voltage (VGT): 2.5 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 5 mA
   Holding current (IH): 15 mA

Package: TO‑225

 

2N6073A Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

2N6073A Datasheet

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2N6073A
 datasheet

Page #2

2N6073A
 datasheet #2

Description

DATA SHEET 2N6071, A, B 2N6073, A, B 2N6075, A, B SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS TO-126 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6071, A, B series types are silicon sensitive gate triacs designed for such applications as light dimmers, motor controls, heating controls, and power supplies. MAXIMUM RATINGS (TJ=25°C unless otherwise noted) 2N6071 2N6073 2N6075 2N6071A 2N6073A 2N6075A SYMBOL 2N6071B 2N6073B 2N6075B UNITS Peak Repetitive Off-State

 
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