All Transistors. SCR. 2N6075BG Datasheet

 

2N6075BG Triac DATASHEET

2N6075BG ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 10 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 30 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
   Junction to case thermal resistance (RTH(j-c)): 3.5 K/W
   Triggering gate voltage (VGT): 2.5 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 3 mA
   Holding current (IH): 15 mA

Package: TO‑225

 

2N6075BG Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

2N6075BG Datasheet

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2N6075BG
 datasheet

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2N6075BG
 datasheet #2

Description

2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full‐wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full‐wave silicon gate controlled solid‐state devices are http://onsemi.com needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or TRIACS negative gate triggering

 
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