2N6075BG Triac DATASHEET

2N6075BG ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 10 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 30 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 75 K/W
   Junction to case thermal resistance (R_TH(j-c)): 3.5 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 2 V
   Triggering gate current (I_GT): 3 mA
   Holding current (I_H): 15 mA

Package: TO‑225

 

2N6075BG Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

2N6075BG Datasheet

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Description

2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full‐wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full‐wave silicon gate controlled solid‐state devices are http://onsemi.com needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or TRIACS negative gate triggering