All Transistors. SCR. 2N6240 Datasheet

 

2N6240 SCR DATASHEET

2N6240 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 0.5 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 2.6 A
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 25 A
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
   Junction to case thermal resistance (RTH(j-c)): 3 K/W
   Triggering gate voltage (VGT): 1 V
   Peak on-state voltage drop (VTM): 2.2 V
   Triggering gate current (IGT): 0.2 mA
   Holding current (IH): 5 mA

Package: TO‑225

 

2N6240 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

2N6240 Datasheet

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2N6240
 datasheet

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2N6240
 datasheet #2

Description

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6237/D 2N6237 thru Silicon Controlled Rectifiers 2N6241 Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume consumer applications such as SCRs temperature, light, and speed control; process and remote control, and warning 4 AMPERES RMS systems where reliability of operation is important. 50 thru 600 VOLTS • Passivated Surface for Reliability and Uniformity • Power Rated at Economical

 
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