All Transistors. SCR. 2N6397 Datasheet

 

2N6397 SCR DATASHEET

2N6397 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 20 W
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 7.6 A
   Maximum RMS on-state current (IT(RMS)): 12 A
   Non repetitive surge peak on-state current (ITSM): 100 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 1.7 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 2.2 V
   Triggering gate current (IGT): 30 mA
   Holding current (IH): 40 mA

Package: TO220AB

 

2N6397 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

2N6397 Datasheet

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2N6397
 datasheet

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2N6397
 datasheet #2

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