All Transistors. SCR. 2N6399G Datasheet

 

2N6399G SCR DATASHEET

2N6399G ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 12 A
   Non repetitive surge peak on-state current (ITSM): 100 A
   Triggering gate voltage (VGT): 1.5 V
   Triggering gate current (IGT): 0.03 mA

Package: TO‑220

 

2N6399G Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

2N6399G Datasheet

Page #1

2N6399G
 datasheet

Page #2

2N6399G
 datasheet #2

Description

2N6394 Series Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features http://onsemi.com • Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability SCRs • Small, Rugged, Thermowatt Construction for Low Thermal 12 AMPERES RMS Resistance, High Heat Dissipation and Durability 50 thru 800 VOLTS • Blocking Vo

 
Back to Top