2N6401G SCR DATASHEET

2N6401G ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 100 V
   Maximum RMS on-state current (I_T(RMS)): 16 A
   Non repetitive surge peak on-state current (I_TSM): 160 A
   Triggering gate voltage (V_GT): 1.5 V
   Triggering gate current (I_GT): 0.03 mA

Package: TO‑220

 

2N6401G Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

2N6401G Datasheet

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Description

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6400/D 2N6400 thru Silicon Controlled Rectifiers 2N6405 Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, SCRs heating controls and power supplies; or wherever half–wave silicon gate–controlled, 16 AMPERES RMS solid–state devices are needed. 50 thru 800 VOLTS • Glass Passivated Junctions with Center Gate Geometry for Greater Parameter