All Transistors. SCR. 2N6405G Datasheet

 

2N6405G SCR DATASHEET

2N6405G ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 16 A
   Non repetitive surge peak on-state current (ITSM): 160 A
   Triggering gate voltage (VGT): 1.5 V
   Triggering gate current (IGT): 0.03 mA

Package: TO‑220

 

2N6405G Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

2N6405G Datasheet

Page #1

2N6405G
 datasheet

Page #2

2N6405G
 datasheet #2

Description

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6400/D 2N6400 thru Silicon Controlled Rectifiers 2N6405 Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, SCRs heating controls and power supplies; or wherever half–wave silicon gate–controlled, 16 AMPERES RMS solid–state devices are needed. 50 thru 800 VOLTS • Glass Passivated Junctions with Center Gate Geometry for Greater Parameter

 
Back to Top