2N6505TG SCR DATASHEET
2N6505TG ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 100 V
Maximum RMS on-state current (IT(RMS)): 25 A
Non repetitive surge peak on-state current (ITSM): 300 A
Triggering gate voltage (VGT): 1.5 V
Triggering gate current (IGT): 0.03 mA
Package: TO‑220
2N6505TG Datasheet
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Description
2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. http://onsemi.com Features • Glass Passivated Junctions with Center Gate Fire for Greater SCRs Parameter Uniformity and Stability 25 AMPERES RMS • Small, Rugged, Thermowatt Constructed for Low Thermal 50 thru 800 VOLTS Resistance, High Heat Dissipation a
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |