All Transistors. SCR. 2N6508TG Datasheet

 

2N6508TG SCR DATASHEET

2N6508TG ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 25 A
   Non repetitive surge peak on-state current (ITSM): 300 A
   Triggering gate voltage (VGT): 1.5 V
   Triggering gate current (IGT): 0.03 mA

Package: TO‑220

 

2N6508TG Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

2N6508TG Datasheet

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2N6508TG
 datasheet

Page #2

2N6508TG
 datasheet #2

Description

2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. http://onsemi.com Features • Glass Passivated Junctions with Center Gate Fire for Greater SCRs Parameter Uniformity and Stability 25 AMPERES RMS • Small, Rugged, Thermowatt Constructed for Low Thermal 50 thru 800 VOLTS Resistance, High Heat Dissipation a

 
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