2N6509G SCR DATASHEET

2N6509G ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum average on-state current (I_T(AVR)): 16 A
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 250 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.5 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.8 V
   Triggering gate current (I_GT): 30 mA

Package: TO‑220

 

2N6509G Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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2N6509G Datasheet

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Description

2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half‐wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. http://onsemi.com Features • Glass Passivated Junctions with Center Gate Fire for Greater SCRs Parameter Uniformity and Stability 25 AMPERES RMS • Small, Rugged, Thermowatt Constructed for Low Thermal 50 thru 800 VOLTS Resistance, High Heat Dissipation a