All Transistors. SCR. 2N6605 Datasheet

 

2N6605 SCR DATASHEET

2N6605 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 30 V
   Non repetitive surge peak on-state current (ITSM): 6 A
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 200 mA
   Holding current (IH): 5 mA

Package: TO‑206AA

 

2N6605 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

2N6605 Datasheet

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2N6605
 datasheet

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2N6605
 datasheet #2

Description

2N6605 2N6606 2N6607 www.centralsemi.com 2N6608 DESCRIPTION: SILICON CONTROLLED RECTIFIER The CENTRAL SEMICONDUCTOR 2N6605 Series 0.35 AMP, 30 THRU 200 VOLTS types are hermetically sealed silicon controlled rectifiers manufactured in a TO-18 case, designed for control systems and sensing circuit applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6605 2N6606 2N6607 2N6608 UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 200 V

 
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