2N691 SCR DATASHEET

2N691 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 700 V
   Maximum average on-state current (I_T(AVR)): 16 A
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 150 A
   Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 50 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -65..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.7 K/W
   Triggering gate voltage (V_GT): 3 V
   Peak on-state voltage drop (V_TM): 2 V
   Triggering gate current (I_GT): 40 mA
   Holding current (I_H): 0.05 mA

Package: TO‑208AA

 

2N691 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

2N691 Datasheet

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Description

Discrete Semiconductors Semitronics C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes / 25-800 Volts Silicon Controlled Rectifiers (SCR) are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control applications. They are all-diffused devices backed by years of design and field experience. Features • Low Gate Current • Low On-State Voltage • Hermetic Packaging Outline Drawing • Low Thermal Impeda