All Transistors. SCR. 2P4M-TO126 Datasheet

 

2P4M-TO126 SCR DATASHEET

2P4M-TO126 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 400 V
   Maximum average on-state current (IT(AVR)): 4 A
   Non repetitive surge peak on-state current (ITSM): 20 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.8 V
   Triggering gate current (IGT): 0.2 mA

Package: TO‑126

 

2P4M-TO126 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

2P4M-TO126 Datasheet

Page #1

2P4M-TO126
 datasheet

Page #2

2P4M-TO126
 datasheet #2

Description

isc Thyristors 2P4M APPLICATIONS ·Highly sensitive triggering levels ·For capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies applications. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V Repetitive peak off-state voltage 400 V DRM V Repetitive peak reverse voltage 400 V RRM I On-state current 180°conduction ang

 
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