2P4M1G SCR DATASHEET

2P4M1G ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum average on-state current (I_T(AVR)): 2 A
   Maximum RMS on-state current (I_T(RMS)): 2 A
   Non repetitive surge peak on-state current (I_TSM): 20 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 70 K/W
   Junction to case thermal resistance (R_TH(j-c)): 10 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 2.2 V
   Triggering gate current (I_GT): 0.2 mA

Package: TO‑202

 

2P4M1G Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

2P4M1G Datasheet

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Description

2P4M1G,2P6M1G SCRs Simplified outline TO-202 Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Features • Blocking voltage to 600 V • a On-state RMS current to 2 A k • Ultra low gate trigger current g Description