2P6MG SCR DATASHEET

2P6MG ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 2 A
   Maximum RMS on-state current (I_T(RMS)): 2 A
   Non repetitive surge peak on-state current (I_TSM): 20 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 70 K/W
   Junction to case thermal resistance (R_TH(j-c)): 10 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 2.2 V
   Triggering gate current (I_GT): 0.2 mA

Package: TO‑126

 

2P6MG Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

2P6MG Datasheet

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Description

2P4MG,2P6MG SCRs Description Simplified outline Glass passivated, sensitive gate thyristors in a plastic envelope, TO-126 intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Features • Blocking voltage to 600 V a • k On-state RMS current to 2 A • Ultra low gate trigger current g Description