All Transistors. SCR. 3000PT20E0 Datasheet

 

3000PT20E0 SCR DATASHEET

3000PT20E0 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 10 W
   Maximum repetitive peak and off-state voltage (VDRM): 2000 V
   Maximum average on-state current (IT(AVR)): 3000 A
   Maximum RMS on-state current (IT(RMS)): 3790 A
   Non repetitive surge peak on-state current (ITSM): 49900 A
   Critical repetitive rate of rise of on-state current (dI/dt): 400 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 2.2 V
   Triggering gate current (IGT): 300 mA
   Holding current (IH): 300 mA

 

3000PT20E0 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

3000PT20E0 Datasheet

Page #1

3000PT20E0
 datasheet

Page #2

3000PT20E0
 datasheet #2

Description

RoHS 3000PT Series RoHS SEMICONDUCTOR RoHS 3000PT Series RoHS SEMICONDUCTOR Fig. 1 Fig. 2 Peak on-state voltage Vs. Peak on-state Current Max. Junction to heatsink thermal impedance Vs. Time 0.018 2 0.015 1.6 0.012 Tj = 125 C 0.009 1.2 0.006 0.8 0.003 0 0.4 0.001 0.01 0.1 1 10 100 1000 10000 Instantaneous on-state current , A Time , S Fig. 3 Fig. 4 Max. Power Dissipation Vs. Mean on-state Current Max. heatsink Temperature Vs. Mean on-state Current 4500 140 18

 
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