30TPS12 SCR DATASHEET
30TPS12 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 8 W
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 20 A
Maximum RMS on-state current (IT(RMS)): 30 A
Non repetitive surge peak on-state current (ITSM): 300 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 40 K/W
Junction to case thermal resistance (RTH(j-c)): 0.8 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.3 V
Triggering gate current (IGT): 45 mA
Holding current (IH): 100 mA
Package: TO‑247AC
30TPS12 Datasheet
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Description
30TPS... High Voltage Series Vishay High Power Products Phase Control SCR, 20 A DESCRIPTION/FEATURES 2 (A) The 30TPS... High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. 1 (K) (G) 3 TO-247AC Typical applications are in input rectification (soft start) and these products are designed to be used with
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |