3370PT16DX0 SCR DATASHEET
3370PT16DX0 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 5 W
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 3370 A
Maximum RMS on-state current (IT(RMS)): 12100 A
Non repetitive surge peak on-state current (ITSM): 49000 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.02 K/W
Triggering gate voltage (VGT): 1.8 V
Peak on-state voltage drop (VTM): 1.2 V
Triggering gate current (IGT): 100 mA
Holding current (IH): 600 mA
3370PT16DX0 Datasheet
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Description
RoHS 3370PT Series RoHS SEMICONDUCTOR Nell High Power Products Phase Control Thyristors (Hockey PUK Version), 3370A FEATURES Center amplifying gate Metal case with ceramic insulator lnternational standard case Nell’s DX-type Capsule Compliant to RoHS Low on-state and switching losses Nell’s DX-type Capsule Designed and qualified for industrial level TYPICAL APPLICATIONS DC and AC motor controls Controlled DC power supplies AC controllers PRODUCT SUMMARY IT
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Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |