3380PTH12E15 SCR Spec
3380PTH12E15 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 3380 A
Non repetitive surge peak on-state current (ITSM): 43900 A
Critical repetitive rate of rise of on-state current (dI/dt): 1000 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..150 °C
Junction to case thermal resistance (RTH(j-c)): 0.01 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.54 V
Triggering gate current (IGT): 300 mA
Holding current (IH): 1000 mA
3380PTH12E15 Spec
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Description
SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR Ω SEMICONDUCTOR SEMICONDUCTOR


