All Transistors. SCR. 3CT00607MA Datasheet

 

3CT00607MA SCR DATASHEET

3CT00607MA ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 0.1 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 1 A
   Non repetitive surge peak on-state current (ITSM): 10 A
   Critical repetitive rate of rise of on-state current (dI/dt): 20 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..150 °C
   Triggering gate voltage (VGT): 1.8 V
   Peak on-state voltage drop (VTM): 1.5 V
   Triggering gate current (IGT): 5 mA
   Holding current (IH): 5 mA

Package: TO‑92

 

3CT00607MA Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

3CT00607MA Datasheet

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3CT00607MA
 datasheet

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3CT00607MA
 datasheet #2

Description

Z00607MA(3CT00607MA) 双向可控硅/TRIAC 用途:用于低功率交流转换。 Purpose: For low power AC switching applications. 特点:低控制极触发电流。 Features: Low gate triggering current. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 测试条件 数值 单位 Symbol Test condition Rating Unit F=50Hz t=20ms 9.5 A I TSM F=60Hz t=16.7ms 10.0 A I2T Tp=10ms 0.45 A2S dI/dt F=120Hz Tj=110℃ 20 A/μs I GM tp=20μs Tj=110℃ 1.0 A

 
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