400PT12A0 SCR DATASHEET
400PT12A0 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 2 W
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 400 A
Maximum RMS on-state current (IT(RMS)): 769 A
Non repetitive surge peak on-state current (ITSM): 5700 A
Critical repetitive rate of rise of on-state current (dI/dt): 1000 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.17 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.69 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 600 mA
400PT12A0 Datasheet
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Description
RoHS 400PT Series RoHS SEMICONDUCTOR Phase Control Thyristors Features A TYPE 1.400 PT series Thyristors are deigned for various power controls 2. Voltage rating up to 1800 V. 3. Typical application 20 DC motor control Controlled DC power supplies AC controllers Ordering code 400 PT xx A 0 19(0.75) DIA. MAX. 2 HOLES3.56(0.14) (1) (2) (3) (4) (5) x 1.83(0.07) MIN. DEEP 13.7/14.4 (0.54/0.57) (1) Maximum average on-state current , A (2) For Phase Control Thyristor G
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |