All Transistors. SCR. 40C80B Datasheet

 

40C80B SCR DATASHEET

40C80B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 10 W
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum average on-state current (IT(AVR)): 40 A
   Maximum RMS on-state current (IT(RMS)): 63 A
   Non repetitive surge peak on-state current (ITSM): 1000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -65..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.35 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 3 V
   Triggering gate current (IGT): 100 mA
   Holding current (IH): 200 mA

Package: TO‑208AC

 

40C80B Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

40C80B Datasheet

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40C80B
 datasheet

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40C80B
 datasheet #2

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