40TPS12PBF SCR DATASHEET

40TPS12PBF ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 10 W
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 35 A
   Maximum RMS on-state current (I_T(RMS)): 55 A
   Non repetitive surge peak on-state current (I_TSM): 500 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 40 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.6 K/W
   Triggering gate voltage (V_GT): 2.5 V
   Peak on-state voltage drop (V_TM): 1.85 V
   Triggering gate current (I_GT): 150 mA
   Holding current (I_H): 150 mA

Package: TO‑247AC

 

40TPS12PBF Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

40TPS12PBF Datasheet

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Description

40TPS...APbF/40TPS...PbF High Voltage Series Vishay High Power Products Phase Control SCR, 35 A DESCRIPTION/FEATURES 2 The 40TPS...APbF High Voltage Series of silicon (A) Pb-free controlled rectifiers are specifically designed for Available medium power switching and phase control RoHS* COMPLIANT applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. Low Igt parts available. 1 (K) TO-247AC (G) 3 Typical applications are