504DCR-16 SCR DATASHEET
504DCR-16 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 500 A
Maximum RMS on-state current (IT(RMS)): 785 A
Non repetitive surge peak on-state current (ITSM): 6000 A
Critical repetitive rate of rise of on-state current (dI/dt): 1000 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.08 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.3 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 200 mA
Package: TO‑200AB
504DCR-16 Datasheet
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Description
504DCR 504DCR Naina Semiconductor emiconductor Ltd. Phase Control Control Thyristors (Capsule Type) Features • Metal case with ceramic insulator • High current rating • Bifacial cooled • Center gate trigger Applications • DC motor controls • AC controllers TO-200AB (A-PUK) 200AB (A • DC power supplies Voltage Ratings VDRM/VRRM, Maximum Repetitive peak VRSM, Maximum non- IDRM/IRRM, Maximum at TJ = , Maximum Repetitive peak Type Voltage & off-
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