50RIA40S90 SCR DATASHEET
50RIA40S90 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 10 W
Maximum repetitive peak and off-state voltage (VDRM): 400 V
Maximum average on-state current (IT(AVR)): 50 A
Maximum RMS on-state current (IT(RMS)): 80 A
Non repetitive surge peak on-state current (ITSM): 1430 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.35 K/W
Triggering gate voltage (VGT): 2.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 100 mA
Holding current (IH): 200 mA
Package: TO‑208AC
50RIA40S90 Datasheet
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Description
50RIA Series Vishay High Power Products Medium Power Thyristors (Stud Version), 50 A FEATURES • High current rating RoHS • Excellent dynamic characteristics COMPLIANT • dV/dt = 1000 V/µs option • Superior surge capabilities • Standard package • Metric threads version available • Types up to 1200 V VDRM/VRRM TO-208AC (TO-65) • RoHS compliant TYPICAL APPLICATIONS • Phase control applications in converters PRODUCT SUMMARY • Lighting circuits IT(AV) 50 A
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Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |