56NT-100 SCR DATASHEET

56NT-100 ELECTRICAL SPECIFICATIONS

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1000 V
   Maximum average on-state current (I_T(AVR)): 55 A
   Non repetitive surge peak on-state current (I_TSM): 900 A
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -60..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.6 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.2 V
   Triggering gate current (I_GT): 100 mA
   Holding current (I_H): 150 mA

Package: TO‑208AC

56NT-100 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

56NT-100 Datasheet

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Description

56NT Naina Semiconductor emiconductor Ltd. Phase Control Thyristors Phase Control Thyristors (Stud Type), 56A Features • Improved glass passivation for high reliability glass passivation for high reliability • Exceptional stability at high temperatures Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance Electrical Ratings (T = 250C, unless otherwise noted) C, unless otherwise no

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All Transistors. SCR. 56NT-100 Datasheet