5STP04D4200 SCR Spec

5STP04D4200 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 4200 V
   Maximum average on-state current (I_T(AVR)): 470 A
   Maximum RMS on-state current (I_T(RMS)): 740 A
   Non repetitive surge peak on-state current (I_TSM): 6400 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Triggering gate voltage (V_GT): 2.6 V
   Peak on-state voltage drop (V_TM): 1.78 V
   Triggering gate current (I_GT): 400 mA
   Holding current (I_H): 75 mA

 

5STP04D4200 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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5STP04D4200 Spec

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Description

VDSM = 4200 V Phase Control Thyristor ITAVM = 470 A ITRMS = 740 A ITSM = 6400 A 5STP 04D4200 VT0 =1 V rT =1.5 mΩ Ω Ω Ω Doc. No. 5SYA1025-04 Jan. 02 • Patented free-floating silicon technology • • • • Low on-state and switching losses • • • • Designed for traction, energy and industrial applications • • • • Optimum power handling capability • • • • Interdigitated amplifying gate • • • Blocking Maximum rated value