604DCR-80 SCR DATASHEET
604DCR-80 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum average on-state current (IT(AVR)): 600 A
Maximum RMS on-state current (IT(RMS)): 940 A
Non repetitive surge peak on-state current (ITSM): 9100 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.06 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 200 mA
Holding current (IH): 200 mA
Package: TO‑200AB
604DCR-80 Datasheet
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Description
6 604DCR Naina Semiconductor emiconductor Ltd. Phase Control Control Thyristors (Capsule Type) Features • Metal case with ceramic insulator • High current rating • Bifacial cooled • Center gate trigger Applications • DC motor control • AC controllers TO-200AB (E-PUK) 200AB • DC power supplies Voltage Ratings VDRM/VRRM, Maximum Repetitive peak VRSM, Maximum non- IDRM/IRRM, Maximum at TJ = , Maximum Repetitive peak Type Voltage & off-state vol
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |