70NT-60 SCR DATASHEET
70NT-60 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum average on-state current (IT(AVR)): 70 A
Maximum RMS on-state current (IT(RMS)): 110 A
Non repetitive surge peak on-state current (ITSM): 1800 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -60..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.3 K/W
Triggering gate voltage (VGT): 2 V
Peak on-state voltage drop (VTM): 1.3 V
Triggering gate current (IGT): 150 mA
Holding current (IH): 150 mA
Package: TO‑209AC
70NT-60 Datasheet
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Description
70NT Naina Semiconductor emiconductor Ltd. Phase Control Thyristors Phase Control Thyristors (Stud Type), 70A Features • Improved glass passivation for high reliability glass passivation for high reliability • Exceptional stability at high temperatures Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance Electrical Ratings (T = 250C, unless otherwise noted) C, unless otherwise no
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |