All Transistors. SCR. 70PT10D Datasheet

 

70PT10D SCR DATASHEET

70PT10D ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (PGM): 2 W
   Maximum repetitive peak and off-state voltage (VDRM): 1000 V
   Maximum average on-state current (IT(AVR)): 70 A
   Maximum RMS on-state current (IT(RMS)): 75 A
   Non repetitive surge peak on-state current (ITSM): 1300 A
   Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 45 K/W
   Junction to case thermal resistance (RTH(j-c)): 0.32 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.55 V
   Triggering gate current (IGT): 80 mA
   Holding current (IH): 130 mA

Package: TO‑247

 

70PT10D Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

70PT10D Datasheet

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70PT10D
 datasheet

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70PT10D
 datasheet #2

Description

RoHS 70PT Series RoHS SEMICONDUCTOR Stansard SCRs, 70A Main Features Symbol Value Unit IT(RMS) A 75 VDRM/VRRM 800 to 1800 V IGT 100 mA DESCRIPTION The 70PT series of silicon controlled rectifiers are 1 high performance glass passivated technology, 2 3 and are suitable for general purpose applications, 2(A) where power handling and power dissipation are TO-247S (non-Insulated) critical, such as solid state relay, welding equipment 3(G) high power motor control,

 
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