70PT12D SCR Spec
70PT12D ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 2 W
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 70 A
Maximum RMS on-state current (IT(RMS)): 75 A
Non repetitive surge peak on-state current (ITSM): 1300 A
Critical repetitive rate of rise of on-state current (dI/dt): 150 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 45 K/W
Junction to case thermal resistance (RTH(j-c)): 0.32 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.55 V
Triggering gate current (IGT): 80 mA
Holding current (IH): 130 mA
Package: TO‑247
70PT12D Spec
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Description
RoHS 70PT Series RoHS SEMICONDUCTOR Stansard SCRs, 70A Main Features Symbol Value Unit IT(RMS) A 75 VDRM/VRRM 800 to 1800 V IGT 100 mA DESCRIPTION The 70PT series of silicon controlled rectifiers are 1 high performance glass passivated technology, 2 3 and are suitable for general purpose applications, 2(A) where power handling and power dissipation are TO-247S (non-Insulated) critical, such as solid state relay, welding equipment 3(G) high power motor control,


