All Transistors. SCR. 804DCR-160 Datasheet

 

804DCR-160 SCR DATASHEET

804DCR-160 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 1600 V
   Maximum average on-state current (IT(AVR)): 800 A
   Maximum RMS on-state current (IT(RMS)): 1256 A
   Non repetitive surge peak on-state current (ITSM): 12000 A
   Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.04 K/W
   Triggering gate voltage (VGT): 3 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 200 mA
   Holding current (IH): 300 mA

Package: TO‑200AC

 

804DCR-160 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

804DCR-160 Datasheet

Page #1

804DCR-160
 datasheet

Page #2

804DCR-160
 datasheet #2

Description

8 804DCR Naina Semiconductor emiconductor Ltd. Phase Control Control Thyristors (Capsule Type) Features • Metal case with ceramic insulator • High current rating • Bifacial cooled • Center gate trigger Applications • DC motor controls • AC controllers TO-200AC (B-PUK) 200A • DC power supplies Voltage Ratings VDRM/VRRM, Maximum Repetitive peak VRSM, Maximum non- IDRM/IRRM, Maximum at TJ = , Maximum Repetitive peak Type Voltage & off-state vol

 
Back to Top