804DCR-80 SCR Spec
804DCR-80 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum average on-state current (IT(AVR)): 800 A
Maximum RMS on-state current (IT(RMS)): 1256 A
Non repetitive surge peak on-state current (ITSM): 12000 A
Critical repetitive rate of rise of on-state current (dI/dt): 200 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to case thermal resistance (RTH(j-c)): 0.04 K/W
Triggering gate voltage (VGT): 3 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 200 mA
Holding current (IH): 300 mA
Package: TO‑200AC
804DCR-80 Spec
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Description
8 804DCR Naina Semiconductor emiconductor Ltd. Phase Control Control Thyristors (Capsule Type) Features • Metal case with ceramic insulator • High current rating • Bifacial cooled • Center gate trigger Applications • DC motor controls • AC controllers TO-200AC (B-PUK) 200A • DC power supplies Voltage Ratings VDRM/VRRM, Maximum Repetitive peak VRSM, Maximum non- IDRM/IRRM, Maximum at TJ = , Maximum Repetitive peak Type Voltage & off-state vol


