AT706 SCR DATASHEET
AT706 ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 150 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum average on-state current (IT(AVR)): 4305 A
Non repetitive surge peak on-state current (ITSM): 70 A
Critical repetitive rate of rise of on-state current (dI/dt): 320 A/µs
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -30..125 °C
Triggering gate voltage (VGT): 3.5 V
Peak on-state voltage drop (VTM): 1.5 V
Triggering gate current (IGT): 250 mA
Holding current (IH): 300 mA
AT706 Datasheet
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Description
Беларусь г.Минск тел./факс 8(017)200-56-46 электронные компоненты радиодетали www.fotorele.net e:mail minsk17@tut.by POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY POSEICO Tel. +39 010 6556234 - Fax +39 010 6557519 POSEICO SPA Sales Office: POwer SEmiconductors Italian COrporation Tel. +39 010 6556775 - Fax +39 010 6445141 PHASE CONTROL THYRISTOR AT706 Repetitive voltage up to 800 V Mean on-state current 4305 A Surge current
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |