BCR08AS-12A Triac DATASHEET

BCR08AS-12A ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 0.8 A
   Non repetitive surge peak on-state current (I_TSM): 8 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 65 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 2 V
   Triggering gate current (I_GT): 0.01 mA

Package: SOT‑89

BCR08AS-12A Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

BCR08AS-12A Datasheet

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Description

Preliminary Datasheet BCR08AS-12A R07DS0134EJ0500 (Previous: REJ03G0292-0400) Triac Rev.5.00 Low Power Use Sep 15, 2010 Features  IT (RMS) : 0.8 A  Non-Insulated Type  VDRM : 600 V  Planar Passivation Type  IFGTI, IRGTI, IRGT III : 5 mA  Surface Mounted type  IFGT III : 10 mA  Completed Pb Free Outline RENESAS Package code: PLZZ0004CA-A RENESAS Package code PL ode: PL ode: LZZ0004CB-A (Package name: UPAK) (Package name: SOT OT-89) OT-89) 2,

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. BCR08AS-12A Datasheet